光伏材料锗衬底片技术参数 | |
Doping type | P（or S-C-P） |
| Doped materials | Ge-ga |
| Diameter | 100±0.25 |
| Crystal orientation | （100）to向[111]by偏9°（or或6°）±0.5° |
| Steering angle | N/A |
| Crystal orientation of primary reference plane | <110>（or 100）±0.2° |
| Primary reference plane length | 15（or 32）±1 |
| Crystal orientation of auxiliary reference plane | N/A |
| Auxiliary reference plane length | N/A |
| Resistivity | 0.01-0.04（0.005-0.003） |
| Electronic mobility | N/A（T>800cm2/V.S.） |
| Carrier concentration Value | N/A（0.2-3E18） |
| Dislocation density | ≤300 |
| Laser inscription | Opposite side of primary reference plane (determined according to the customer) |
| Thickness | 140（175）±10 |
| TTV | ＜10-15 |
| TIR | N/A |
| BOW | ＜10-15 |
| Warp | ＜15 |
| Surface | Polishing on front side/grinding on back side (diamond) |
| Grain amount | N/A[＜300（＞0.3µm）] |
| Strength | N/A（≥5-6lbf） |
| Minority carrier lifetime | N/A（＞1µSec） |
| Pacling material and method | Packed with nitrogen-filled double-layer bag (or single-wafer packaging, epi-ready) |
